UMD6N digital transistor (npn+ pnp) features z dta143t(pnp) and dtc143t(npn) trans istors are built-in a package. z transistor elements are independen t, eliminating interference. z mounting cost and area can be cut in half. external circuit marking:d6 absolute maximum ratings(ta=25 ) parameter symbol limits unit collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 v collector current i c 100 ma collector power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions collector-base breakdown voltage v (br)cbo 50 v i c =50 a collector-emitter breakdown voltage v (br)ceo 50 v i c =1ma emitter-base breakdown voltage v (br)ebo 5 v i e =50 a collector cut-off current i cbo 0.5 a v cb =50v emitter cut-off current i ebo 0.5 a v eb =4v collector-emitter saturation voltage v ce(sat) 0.3 v i c =5ma,i b =0.25ma dc current transfer ratio h fe 100 600 v ce =5v,i c =1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz sot-363 1 a,dec,2010 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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